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  :? :?:? :?:::?:?:?:?:?:?:?:?: @?:?:?:?:?::?:?:w:?:?::o:::?:?::?:? @?:?:?:?:?:::?: @?::?:?::?::?:w:?:1::?:?::?:?:w::?:?::?:?: @?:?:?:?::?:?:?:w:o:?:?::?:o:?:?::::?::o: @?:::?:w:o:?:?:?::?:::?:?::?:?:w @?:?:::o:::? ::?::?:?:?:?:?: :a:e:?:1:?:? :?:e:?:? ::?:?:? :?:?::? ::?:?:? ::?:?::?::?:w:::?:o:?::?:?:?:?:?:?:?:?:1::?:?:? :a:?:?:?:?:e:?::?:?:?:? :? :? :?:? :?:::?:?:?:?:?:?:?:?: :a::?:?:?:?:w::?:o:?:?:?:?:?:?:w::|:a:?:?:? @?:?:?:?:o:?:::o:?:?:w:o:?:?::?:o:?:?::::?::o: :?:?:?:?:?=? ::?::?:?:?:?:?: :a:e:?:1:?:? :?:?:?:?::?::?:? :::?:? :?:e:?:? ::?:?:? :?:?::? ::?:?:? :a:?:?:?:?:?:w::?:?:?::?:?:?:?:a :?::?::?:?::?:::o:?:w:1::?:?:a:?:?:?:?:w::?:?:?:?:?:? :?:-:?:: :?:?:?:?:?:? :?:? :?:?:?:?:?? :?:?:?? :?:|:?:w:w :?:?:w:?:?:?:?:?:?:?:?:?:?:?:w:?:?:w:?:?:?::?:?::?:?:w:?:?:?:?:?::?:?:::?:? :?:?:w:::?::?:?:w:?::?:?:?:w:?::?::?:?:?:w:1:e:w:?:?:?::?::?:w:::?:o:?::?:?:w:?:?:?:?:?::?:?:::?:? :?:?:w:?::?:e:w:o:e:o:?:?:w >? :w:?:|:?
:? :?:? @?:?:e:?::o:?:?:w:?:?:?:o:?:::o:?:?:w:?:?:?:w:?:?:?::?:?:?:w:o:?:?::?:o:?:?::::?::o: 3v 01 23 4 5 0 v ds - drain-to-source voltage(v) output characteristics 5 10 15 20 25 30 35 40 45 50 i d - drain current(a) v gs =10thru 4v 25c -55c t c =125c 0.0 0.5 1.0 1.5 2.0 0 5 10 15 20 25 30 35 40 transfer characteristics v gs - gate-to-source voltage(v) i d - drain current(a) 2.5 3.0 3.5 4.0 v gs =4.5v v gs =10v i d - drain current(a) r ds(on) - on-resistance(  ) on-resistance vs. drain current 01020304050 0.000 0.003 0.006 0.009 0.012 0.015 0 6 12 18 24 30 0 500 1000 1500 2000 2500 crss coss ciss v ds - drain-to-source voltage(v) c- capacitance(pf) capacitance f = 1 mhz v gs =0v 0 4 8 12162024 0 2 4 6 8 10 q g - total gate charge(nc) gate charge v gs - gate-to-source voltage(v) i d =15a v ds =10v -50 -25 0 25 50 75 100 125 150 0.50 0.75 1.00 1.25 1.50 1.75 2.00 v gs =10v t j - junction tem p erature ( c ) r ds(on) - on-resistance(  ) (normalized) on-resistance vs. junction temperature i d =15a :?:::?:?:?:?:?:?:?:?: :a::?:?:?:?:w::?:o:?:?:?:?:?:?:w::|:a:?:?:?
:? :?:? 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1 10 60 t j =150c t j =25c v sd - source-to-drain voltage(v) i s - source current(a) source-drain diode forward voltage on-resistance vs.gate-to-source voltage v gs - gate-to-source voltage(v) r ds(on) - on-resistance(  ) 0246810 0.000 0.008 0.016 0.024 0.032 0.040 i d =15a t j - temperature( c) i d = 250 ? a v gs(th) variance(v) threshold voltage -50 -25 0 25 50 75 100 125 150 -0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0 10 20 30 40 50 t a =25 c 10 -2 10 -1 1 power(w) time(sec) 10 single pulse power 0.1 1 10 100 0.01 0.1 1 100 10 100ms 1s 10s limited by r ds(on) i d - drain current(a) v ds - drain-to-source voltage(v) safe operating area, junction-to ambient 100 ? s,10 ? s 1ms 10ms t a =25c single pulse dc,100s :?:::?:?:?:?:?:?:?:?: :a::?:?:?:?:w::?:o:?:?:?:?:?:?:w::|:a:?:?:?
:? :?:? :?:::?:?:?:?:?:?:?:?: :a::?:?:?:?:w::?:o:?:?:?:?:?:?:w::|:a:?:?:? 10 -4 10 -3 10 -2 10 -1 1 10 100 600 t 2 t 1 p dm notes: 0.01 0.1 1 2 0.02 0.05 0.1 0.2 duty cycle = 0.5 single pulse normalized effective transient thermal impedance normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) 1. duty cycle, d 3 = 2. r ?c ja(t) = 50 3 cw 3. t jm - ta = 3 p dm 3 * 3 r ?c ja(t) 4. surface mounted t1 t2


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